Pan He

      Pan He

      Associate professor

Dr. He is an associate professor at the Institute for Nanoelectronic Devices and Quantum Computing, Fudan University. He is a member of the APL Early Career Editorial Advisory Board.

Research Interest

(1) nonlinear electrical transport phenomena and devices;

(2) spin, orbital, and valley electronics and their device applications.

We focus in particular on topological quantum materials, van der Waals layered materials, magnetic materials, and superconductors, as well as their thin-film heterostructures. These systems exhibit intriguing electronic properties and hold strong potential for realizing low-power, multifunctional electronic devices. By leveraging symmetry principles, interface effects, interlayer stacking, and topological properties, we aim to design and control their transport behaviors. Our work primarily employs electrical measurement techniques to investigate nonlinear transport phenomena, including the nonlinear Hall effect, nonlinear magnetoresistance, and nonlinear Nernst effect, as well as spin, orbital, and valley Hall effects. Through the fabrication of micro- and nanoscale electronic devices, we explore transport responses associated with various electronic degrees of freedom under electric fields or thermal gradients, and utilize these effects to develop novel device functionalities.

To date, we have published more than 40 papers in leading journals such as Nature Physics, Nature Nanotechnology, Physical Review Letters, and Nature Communications, with over 2600 citations in total. 

Honors & Awards

Overseas Young Talents of China, Overseas High-Level Talents of Shanghai. 

Brief Bio

Dr. He received his B.S. degree from Shanghai University (2008) and his Ph.D. degree from Fudan University (2014). He was a postdoctoral fellow at the French National Centre for Scientific Research (CNRS) (2014-2015). He worked as a Research Fellow and Senior Research Fellow at the National University of Singapore (2015-2020).

Selected Publications

1. Pan He^#*, Min Zhang^#, Jin Cao^#, Jingru Li, Hao Liu, Jinfeng Zhai, Ruibo Wang, Cong Xiao*, Shengyuan A. Yang* & Jian Shen*. Observation of giant nonlinear valley Hall effect, Nature Physics 22, 534–540 (2026).

2. Jinfeng Zhai^#, Taekoo Oh^#, Hao Liu, Chaoyu Pan, Naoto Nagaosa*, Pan He* and Jian Shen*. Nonreciprocal transport in KTaO3-based interface superconductors with parity-mixing, Phys. Rev. Lett, 134, 236303 (2025).

3. Hao Liu^#, Jingru Li^#, Zhifan Zhang^#, Jinfeng Zhai, Min Zhang, Hua Jiang*, Xincheng Xie, Pan He* and Jian Shen*. Nonlinear Nernst effect in trilayer graphene at zero magnetic field, Nature Nanotechnology, 20, 1221–1227 (2025).

4. Pan He^#*, Hiroki Isobe^#*, Gavin Kok Wai Koon^#, Jun You Tan, Junxiong Hu, Jingru Li, Naoto Nagaosa^* and Jian Shen^*. Third-order nonlinear Hall effect in a quantum Hall system, Nature Nanotechnology, 19, 1460–1465 (2024).

5. J. Zhai^#, M. Trama^#, H. Liu, Z. Zhu, Y. Zhu, C. A. Perroni, R. Citro^*, P. He^*, J. Shen^*. Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO₃ Based Two-Dimensional Electron Gas. Nano Letters, 23, 11892-11898 (2023).

6. Pan He^#*, Gavin Kok Wai Koon^#, Hiroki Isob^#, Jun You Tan, Junxiong Hu, Antonio H. Castro Neto, Liang Fu^* and Hyunsoo Yang^*, Graphene moiré superlattices with giant quantum nonlinearity of chiral Bloch electrons，Nature Nanotechnology, 17, 378–383 (2022).

7. Pan He^#, Hiroki Isobe^#, Dapeng Zhu, Chuang-Han Hsu, Liang Fu^*, and Hyunsoo Yang^*，Quantum frequency doubling in the topological insulator Bi₂Se₃, Nature Communications, 12，698 (2021).

8. P. He^#, C. Hsu^#, S. Shi, K. Cai, J. Wang, Q. Wang, G. Eda, H. Lin, V. Pereira & H. Yang^*, Nonlinear magnetotransport shaped by Fermi surface topology and convexity, Nature Communications, 10，1290 (2019). 

9. Pan He^#, Steven S.-L. Zhang^#, Dapeng Zhu, Shuyuan Shi, Olle G. Heinonen, Giovanni Vignale and Hyunsoo Yang^*，Nonlinear planar Hall effect，Phys. Rev. Lett, 123, 016801 (2019).

10. P. He^#, S. S.-L. Zhang^#, D. Zhu, Y. Liu, Y. Wang, J. Yu, G. Vignale and H. Yang^*, Bilinear magneto-electric resistance as a probe of three-dimensional spin texture in topological surface states, Nature Physics, 14, 495 (2018).

11. P. He^#, S. McKeown Walker^#, Steven S.-L. Zhang, F. Y. Bruno, M. S. Bahramy, J. Lee, Ramaswamy, K. M. Cai, O. Heinonen, G. Vignale, F. Baumberger, and H. Yang^*, Observation of out-of-plane spin texture in a SrTiO₃ (111) surface two-dimensional electron gas, Phys. Rev. Lett. 120, 266802 (2018).

12. P. He^#, X. Qiu^#, V. L. Zhang, Y. Wu, M. H. Kuok, and H. Yang^*, Continuous Tuning of the Magnitude and Direction of Spin-Orbit Torque Using Bilayer Heavy Metals, Advanced Electronic Materials, 2, 1600210 (2016).

13. P. He, X. Ma, J. W. Zhang, H. B. Zhao, G. Lupke, Z. Shi, and S. M. Zhou^*，Quadratic scaling of intrinsic Gilbert damping with spin-orbital coupling in L1₀ FePdPt films: Experiments and ab initio calculations, Phys. Rev. Lett. 110, 077203 (2013).

14. P. He, L. Ma, Z. Shi, G. Y. Guo, J.-G. Zheng, Y. Xin, and S. M. Zhou^*, Chemical Composition Tuning of the Anomalous Hall Effect in Isoelectronic L1₀FePd_1-xPt_x Alloy Films, Phys. Rev. Lett. 109, 066402 (2012).