Pan He
Associate professor
Dr. He is an associate professor at the Institute for Nanoelectronic Devices and Quantum Computing, Fudan University. He is a member of the APL Early Career Editorial Advisory Board.
Research Interest
Dr. He's main research interest lies in the field of condensed matter physics. In particular, he focuses on understanding the spin (magnetic) properties in novel quantum materials and their applications in spintronic devices. Of particular interest are topological materials, two-dimensional materials, strongly correlated materials and their heterostructures. These materials exhibit a variety of intriguing spin (magnetic) properties and offer exciting possibilities for energy-efficient multifunctional devices. They provide a new platform to design and engineer exotic spin (magnetic) phenomena by exploiting symmetry, dimensionality, stacking order and topology. We apply electrical and optical tools to study a wide range of fascinating spintronic phenomena, including the anomalous Hal effect, spin Hall effect, spin-orbit torque, spin-related magnetoresistance, nonlinear Hall effects, etc. Ultrafast time-resolved techniques and nano-device fabrications are utilized to study spintronic phenomena on a time scale down to femtoseconds and a spatial resolution of nanometers, under the conditions of low temperature and high magnetic field. The fundamentally interesting physics and quantum device applications are highly valued in his research. He has 30 publications with some in Nature Physics，Nature Nanotechnology，Physical Review Letters and Nature Communications, citation over 1300, and H index 20 (Google Scholar)
Honors & Awards
Overseas Young Talents of China, Overseas High-Level Talents of Shanghai.
Brief Bio
Dr. He received his B.S. degree from Shanghai University (2008) and his Ph.D. degree from Fudan University (2014). He was a postdoctoral fellow at the French National Centre for Scientific Research (CNRS) (2014-2015). He worked as a Research Fellow and Senior Research Fellow at the National University of Singapore (2015-2020).
Selected Publications
1. Pan He#*, Gavin Kok Wai Koon#, Hiroki Isobe#, Jun You Tan, Junxiong Hu, Antonio H. Castro Neto, Liang Fu* and Hyunsoo Yang*，Graphene moiré superlattices with giant quantum nonlinearity of chiral Bloch electrons，Nature Nanotechnology, 17, 378 (2022).
2. Pan He#, Hiroki Isobe#, Dapeng Zhu, Chuang-Han Hsu, Liang Fu*, and Hyunsoo Yang*，Quantum frequency doubling in the topological insulator Bi2Se3, Nature Communications, 12, 698 (2021).
3. P. He#, C. Hsu#, S. Shi#, K. Cai, J. Wang, Q. Wang, G. Eda, H. Lin, V. Pereira & H. Yang*, Nonlinear magnetotransport shaped by Fermi surface topology and convexity, Nature Communications, 10，1290 (2019).
4. Pan He#, Steven S.-L. Zhang#, Dapeng Zhu, Shuyuan Shi, Olle G. Heinonen, Giovanni Vignale and Hyunsoo Yang*, Nonlinear planar Hall effect，Phys. Rev. Lett., 123, 016801 (2019).
5. P. He#, S. S.-L. Zhang#, D. Zhu, Y. Liu, Y. Wang, J. Yu, G. Vignale and H. Yang*, Bilinear magneto-electric resistance as a probe of three-dimensional spin texture in topological surface states, Nature Physics 14, 495 (2018).
6. P. He#, S. McKeown Walker#, Steven S.-L. Zhang, F. Y. Bruno, M. S. Bahramy, J. Lee, Ramaswamy, K. M. Cai, O. Heinonen, G. Vignale, F. Baumberger, and H. Yang*, Observation of out-of-plane spin texture in a SrTiO3 (111) surface two-dimensional electron gas, Phys. Rev. Lett., 120, 266802 (2018).
7. P. He#, X. Qiu#, V. L. Zhang, Y. Wu, M. H. Kuok, and H. Yang*, Continuous Tuning of the Magnitude and Direction of Spin-Orbit Torque Using Bilayer Heavy Metals, Advanced Electronic Materials, 2, 1600210 (2016).
8. P. He, X. Ma, J. W. Zhang, H. B. Zhao, G. Lupke, Z. Shi, and S. M. Zhou*，Quadratic scaling of intrinsic Gilbert damping with spin-orbital coupling in L10FePdPt films: Experiments and ab initio calculations, Phys. Rev. Lett., 110, 077203 (2013).
9. P. He, L. Ma, Z. Shi, G. Y. Guo, J.-G. Zheng, Y. Xin, and S. M. Zhou*, Chemical Composition Tuning of the Anomalous Hall Effect in Isoelectronic L10FePd1-xPtx Alloy Films, Phys. Rev. Lett., 109, 066402 (2012).
#Co-first author，*Co-corresponding author
