Hangwen Guo
Associate professor
Brief Bio
Dr. Guo received his B.S. degree from Fudan University (2007), and Ph.D. degree from University of Tennessee, Knoxville (2013). He worked as postdoctoral fellow at Louisiana State University from 2013-2016, and then promoted as associate professor. He joined Fudan University as research associate professor in 2018. He has published more than 40 papers with total citations more than 900. He also has multiple invited talks including APS March Meeting etc, and serves as reviewer for Nature Commun., Nano Lett. etc.
Research Interest
Dr. Guo’s main research interest lies in the area of spintronics and strongly correlated oxides thin films, interfaces and nano-devices. In oxide thin films, his interest is in discovering novel quantum phenomena via atomic-controlled deposition; In nano-devices, his focus is in manipulating spin-related properties to design functional devices for next-generation computation scheme such as logic-in-memory computing and neuromorphic computing.
Selected Publications:
1. Z. Wang et al., “Designing antiphase boundaries by atomic control of heterointerfaces”, Proceedings of National Academy of Sciences of the United States of America (PNAS) 115, 9485-9490 (2018).
2. M. Meng et al., “Interface-induced magnetic polar metal phase in complex oxides”, Nature Commun. 10, 5248 (2019).
3. Q. Shi et al., “An electric-field-controlled high-speed coexisting multibit memory and Boolean logic operations in manganite nanowire via local gating” Adv. Electron. Mater. 5, 1900020 (2019).
4. H.W. Guo et al. “Visualizing quantum phenomena at complex oxide interfaces: An atomic view from scanning transmission electron microscopy” Front. Phys. 15, 13401 (2020), invited review.
5. C. Niu et al., “Implementation of artificial neurons with tunable width via magnetic anisotropy” Appl. Phys. Lett. 119, 204101 (2021).
